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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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MOC 8101 /2,/3,/4,/G
OPTICALLY COUPLED ISOLATORS

Circuit

Features

Convenient plastic Dual-In-Line Package.
High Input-Output Isolation Guaranteed 3750 Vac(rms).
UL recognized.
VDE approved per standard 0883/6.80.
Special lead form available which satisfies VDE0883/6.80 requirement for 8 mm minimum creepage distance between input and output solder pads.

Description

The MOC 8101/2/3/4/G series are constructed from a Gallium Arsenide Infrared Emitting Diode optically coupled to a monolithic silicon phototransistor detector. They have been designed and specified to meet the requirements of switchmode power supplies and other applications requiring very closely matched current transfer ratios (CTR), linearity and stable performance over the temperature range. The internal base-to-pin 6 connection has been eliminated for improved noise immunity. Surface Mount Option Available.

Maximum Ratings

Input LED

Forward Current - Continuous:
Forward Current - Peak:
Reverse Voltage:
LED Power Dissipation:
Derate Linearly:
60mA
1A (p.w.=100µs, 120pps)
6V
120mW
1.14mW/°C above 25°C

Output Transistor

Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector Current - Continuous:
Detector Power Dissipation:
Derate Linearly:
30V
7V
150mA
150mW
1.76mW/°C above 25°C

Total Device

Input-Output Isolation Voltage:
Total Device Power Dissipation:
Derate Linearly:
Ambient Operating Temperature Range:
Storage Temperature Range:
Lead Soldering:
3750Vac(rms) (f=60Hz, t=1s; note 1)
250mW
2.94mW/°C above 25°C
-55 to +100°C
-55 to +150°C
260°C for 10s, 1.6mm from case

Electro-Optical Characteristics (Ta=25°C)

INPUT LED PARAMETER CONDITIONS MIN TYP MAX UNIT
VF Forward Voltage IF=10mA 1 1.15 1.5 V
IR Reverse Leakage Current VR=5.0V 5 0.05 10 µA
C Capacitance

18
pF
OUTPUT TRANSISTOR
ICEO1 Collector-Emitter Dark Current VCE=10V, TA=25°C
1 50 nA
ICEO2 VCE=10V, TA=100°C
1
µA
V(BR)CEO Collector-Emitter Breakdown Voltage IC=1.0mA 30 45
V
V(BR)ECO Emitter-Collector Breakdown Voltage IE=100µA 7 7.8
V
CCE Collector-Emitter Capacitance f=1.0MHz, VCE=0
7
V
COUPLED PARAMETER CONDITIONS MIN TYP MAX UNIT
IC Output Collector Current IF=10mA, VCE=10V
MOC8101 5 6.5 8 mA
MOC8102 7.3 9 1.7 mA
MOC8103 10.8 14 17.3 mA
MOC8104 16 20 25.6 mA
VCE(SAT) Collector-Emitter Saturation Voltage IC=500µA, IF=5.0mA
0.15 0.4 V
tON Turn-On Time IC=2.0mA, VCC=10V, RL=100ohm
7.5 20 µs
tOFF Turn-off Time
5.7 20 µs
tR Rise Time
3.2
µs
tF Fall Time
4.7
µs
VISO Isolation Voltage f=60Hz, t=1.0s


Vac(rms)
RISO Isolation Resistance VIO=500V


ohm
CISO Isolation Capacitance VIO=0, f=1.0MHz
0.2
pF

Notes

1. Input-Output Isolation Voltage, Viso, is an internal device dielectric breakdown rating. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.

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