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Circuit
Features
Description
Absolute Maximum Ratings
Electrical
Characteristics
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2500 V Isolation.
Choice Of 4 Current Transfer Ratios.
Low Cost Dual-In-Line Package.
Two
Packages Fit Into a 16 Lead DIP Socket.
The MCT6, MCT62, MCT61 and MCT66 optoisolators have two channels for high
density applications. For four channel applications, two-packages fit into a
standard 16 pin DIP socket. Each channel is an NPN silicon planar
phototransistor optically coupled to a gallium arsenide infrared emitting diode. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications
are guaranteed to a cumulative 0.65% AQL.
Absolute Maximum Ratings (Ta=25°C) | |
| Storage Temperature: Operating Temperature: Lead Soldering: Input-to-Output Isolation Voltage: |
-55°C to +150°C -55°C to +100°C 250°C for 10s, 1.6mm from case ±2500Vdc (note 1) |
Input Diode (each channel) | |
| Forward DC Current: Reverse DC Voltage: Peak Forward Current: Power Dissipation: Derate Linearly: |
60mA 3V 3A (1µs pulse, 300pps) 100mW 1.33mW/°C above 25°C |
Output Transistor | |
| Collector Current: Power Dissipation: Derate Linearly: |
30mA 150mW 2.00mW/°C above 25°C |
Coupled | |
| Input to Output breakdown Voltage: Total Package Power Dissipation: Derate Linearly: |
2500Vrms 400mW 5.33mW/°C above 25°C |
| INPUT DIODE | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
| VF | Rated Forward Voltage | IF=20mA | 1.25 | 1.5 | V | |
| VR | Forward Current | IR=10µA | 3 | 25 | V | |
| IR | Reverse Current | VR=3.0V | 0.001 | 10 | µA | |
| CJ | Junction Capacitance | VF=0V | 50 | pF | ||
| OUTPUT TRANSISTOR (IF=0) | ||||||
| BVCEO | Collector-Emitter Voltage | IC=1mA | 30 | 35 | V | |
| BVECO | Emitter-Collector Voltage | IE=100µA | 6 | 13 | V | |
| ICEO | Leakage Current, Collector-Emitter | VCE=10V | 5 | 100 | nA | |
| CCE | Capacitance Collector-Emitter | VCE=0V | 8 | pF | ||
| COUPLED | ||||||
| IC/IF | DC Current Transfer Ratio | |||||
| MCT6 | VCE=10V, IF=10mA | 20 | % | |||
| MCT66 | 6 | % | ||||
| MCT61 | VCE=5V, IF=5mA | 50 | % | |||
| MCT62 | 100 | % | ||||
| VCE(SAT) | Collector-Emitter Saturation Voltage | |||||
| MCT6, 61, 62 | IC=2mA, IF=16mA | 0.2 | 0.4 | V | ||
| MCT66 | IC=2mA, IF=40mA | 0.2 | 0.4 | V | ||
| SWITCHING TIMES | ||||||
| Non-saturated rise time, fall time | IC=2mA, VCE=10V, | 2.4 | µs | |||
| (Note 2) | RL=100ohm | |||||
| Non-saturated rise time, fall time | IC=2mA, VCE=10V, | 15 | µs | |||
| (Note 2) | RL=1kohm | |||||
| Saturated turn-on time(5V - 0.8V) | RL=2kohm, IF=40mA | 5 | µs | |||
| Saturated turn-off time (from saturation to 2.0V) | RL=2kohm, IF=40mA | 25 | µs | |||
| BW | Bandwidth | IC=2mA, VCC=10V, | 150 | kHz | ||
| RL=100ohm | ||||||
| ISOLATION CHARACRERISTICS | ||||||
| BVI-O | Isolation Voltage | t=1 min | 2500 | VRMS | ||
| RI-O | Isolation Resistance, MCT6X | VI-O=500Vdc | 1E11 | ohm | ||
| Breakdown Voltage channel-to-channel MCT6X | Relative Humidity=40%, f=1MHz | 500 | VDC | |||
| Capacitance between channels | 0.4 | pF | ||||
1.
2. The frequency at which ICis 3dB down from the 1kHz
value.
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