ISOCOM LTD: BSI9000 and CECC20000 Approved Manufacturer

Hutton Close, Crowther Ind Est, Washington, Tyne & Wear NE38 0AH, England
Email: enquiry@isocomoptocouplers.com - Tel: +44 (0)191 4166546 - Fax: +44 (0)191 4155055

Circuit
Description
Absolute Maximum Ratings
Electrical Characteristics

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IS813 S10/S7/S5/S
PHOTON COUPLED INTERRUPTER

Circuit

Part Aperture Size (mm x mm)
IS813S10 0.25 x 1.02
IS813S7 0.18 x 1.02
IS813S5 0.13 x 1.02
IS813S3 0.08 x 1.02

Features

Non-Contact Switching
Completely Sealed Polysulfone Housing
Fast Switching Speed
Four Standard Aperture Sizes

Description

The IS813S* series each consist of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted on opposite sides of an 3.18 mm wide slot. Phototransistor switching takes place whenever an opaque object passes through the slot. The low cost polysulfone housing reduces possible interference from ambient light and provides dust and dirt protection.
All electrical parameters are 100% tested. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
-40°C to +100°C
-40°C to +100°C
240°C for 5s, 1.6mm from case

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current:
Power Dissipation:
Derate Linearly:
50mA
3V
3A (1µ p.w. 300pps)
100mW
1.33mW/°C above 25°C

Output Transistor

Collector-Emitter Voltage VCEO:
Emitter-Collector Voltage VECO:
Collector Current IC:
Power Dissipation:
Derate Linearly:
30V
5V
30mA
100mW
2.0mW/°C above 25°C

Electro-optical Characteristics (Ta=25°C)

SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
VF Forward Voltage IF=20mA
1.22 1.7 V
IR Reverse Current VR=3V

100 nA
V(BR)CEO Collector-Emitter Reverse Breakdown Voltage IC=1mA 30 65
V
V(BR)ECO Emitter-Collector Breakdown Voltage lE=0.1mA 5 9
V
ICEO Collector-Emitter Dark Current VCE=10V, IF=EE=0
5 100 nA
COUPLED
VCE(SAT) Collector-Emitter Saturation Voltage lF=20mA, ...
IS813S10 IC=250µA
0.4 V
IS813S7 IC=175µA 0.4 V
IS813S5 IC=125µA 0.4 V
IS813S3 IC=40µA 0.4 V
lCEO On-State Collector Current lF=20mA, VCE=10V
IS813S10 500
µA
IS813S7 350 µA
IS813S5 250 µA
IS813S3 75 µA



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